Pillar B: Digital Foundation Materials (IGN-B01..B11)

Name: Silicon Carbide (SiC) 150mm/200mm Substrates
SKU: IGN-B11

Essential physical inputs for advanced semiconductor fabrication, power electronics, and high-efficiency permanent magnet motors. All materials verified for purity, dual-use compliance, and export documentation.

IGN-B01

Ultra-Pure Gallium Metal 6N (99.9999% Purity)

Ultra-pure 6N gallium metal (99.9999%) for semiconductor growth. Batch analysis, packaging, and quantity by enquiry.

IGN-B02

Gallium Metal 4N (99.99% Electronic Grade)

4N gallium metal — purity and quantity subject to confirmed specification.

IGN-B03

Gallium Nitride (GaN) Epi-Wafers (6-Inch / 8-Inch)

GaN epitaxial wafers — substrate and layer stack by enquiry.

IGN-B04

Neodymium-Iron-Boron (NdFeB) Sintered Magnets N52

N52 NdFeB magnets — geometry and magnetization to specification.

IGN-B05

Neodymium NdFeB Magnets N52SH High-Temp GBD

N52SH NdFeB magnets — specify configuration and operating conditions.

IGN-B06

Neodymium NdFeB Magnets N50UH Ultra-High Temp

N50UH NdFeB magnets — specify configuration and operating conditions.

IGN-B07

Dysprosium Oxide 99.5% REE Concentrate

Dysprosium oxide — specify purity requirements, assay basis and quantity.

IGN-B08

High-Purity Silicon Wafers 300mm Prime

300 mm silicon wafers — quality and surface requirements by enquiry.

IGN-B09

High-Purity Silicon Wafers 200mm Prime

200 mm monocrystalline silicon prime wafers — substrate orientation, doping and surface finish by enquiry.

IGN-B10

Float Zone (FZ) High-Resistivity Silicon Substrates

Float Zone (FZ) high-resistivity silicon substrates — bulk resistivity, diameter and crystal orientation by enquiry.

IGN-B11

Silicon Carbide (SiC) 150mm/200mm Substrates

Single-crystal 4H-SiC silicon carbide substrate wafers (150 mm / 200 mm) — polytype, doping and surface finish by enquiry.