TECHNICAL SPECIFICATION · IGN-B03
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Technical Data & Commercial Terms
Category: Pillar B: Digital Foundation Materials · Commercial Status: Allocation / Inquiry-Only
1. Physical & Chemical Specification
| Property | Technical Specification / Nominal Parameter |
|---|---|
| Substrate / Structure | GaN-on-Silicon / GaN-on-SiC High-Electron-Mobility Transistor (HEMT) structure |
| Wafer Diameters | 150 mm (6-inch) ± 0.2 mm / 200 mm (8-inch) ± 0.2 mm |
| GaN Epilayer Thickness | 3.5 µm to 5.0 µm total epi stack (AlGaN/GaN/AlN buffer) |
| Sheet Resistance (Rsh) | 300–450 Ω/sq |
| Electron Mobility (µ) | ≥ 1800–2100 cm²/(V·s) at 300K |
| Breakdown Voltage | > 650V to 1200V power device grade |
2. Customs & Standards Compliance
- EU Tariff (TARIC / HS Code):
3818 00 90 (Semiconductor Chemical Wafers / GaN Epi) - Standards & Test Methods: SEMI M1 compliant, AFM surface roughness Ra < 0.3 nm
- Quality Certificates: Wafer mapping report, XRD rocking curve FWHM, AFM surface roughness data
- ℹ️ Customs classification, origin information and applicable documentation are confirmed for the specified product and transaction. Available inspection and compliance documents are listed in the quotation. Any applicable CBAM obligations depend on the product classification and import arrangement.
3. Procurement & Logistics Parameters
- Minimum Order Quantity (MOQ): 10 wafers (Evaluation) / 25 wafers (Full cassette)
- Standard Packaging: Sealed cleanroom wafer cassettes (single wafer shippers or 25-wafer cassettes) under dry N2
- Typical Lead Time: 3–5 weeks production cleanroom batch
- Delivery Incoterms (2020): DDP European Semiconductor Fab / Airfreight
- Hazardous Materials Status: Non-hazardous solid semiconductor wafer (NOT ADR hazardous)
Quality Assurance & Assays: Inspection certificates (e.g. EN 10204 3.1) and accredited independent assayer reports (e.g. SGS / Alfred H Knight) are provided per contract specification and agreed order terms. EU REACH and statutory documentation are aligned during quotation.