TECHNICAL SPECIFICATION · IGN-B11
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Technical Data & Commercial Terms
Category: Pillar B: Digital Foundation Materials · Commercial Status: Allocation / Inquiry-Only
1. Physical & Chemical Specification
| Property | Technical Specification / Nominal Parameter |
|---|---|
| Polytype | 4H-SiC single crystal |
| Diameter / Thickness | 150 mm (6-inch) ± 0.2 mm (350 µm) / 200 mm (8-inch) (500 µm) |
| Electrical Conductivity | n-type conductive (Resistivity 0.015–0.025 Ω·cm) or Semi-insulating |
| Micropipe Density (MPD) | < 0.1 cm⁻² (Zero micropipe grade available) |
| Off-Cut Angle | 4.0° towards <11-20> (Epi-ready substrates) |
| Application | Next-generation EV power inverters, high-efficiency AI server power supplies |
2. Customs & Standards Compliance
- EU Tariff (TARIC / HS Code):
2849 20 00 (Silicon Carbide Substrates) - Standards & Test Methods: SEMI M55 compliant
- Quality Certificates: X-ray diffraction rocking curve, surface defect mapping (Candela/KLA), EN 10204 3.1
- ℹ️ Customs classification, origin information and applicable documentation are confirmed for the specified product and transaction. Available inspection and compliance documents are listed in the quotation. Any applicable CBAM obligations depend on the product classification and import arrangement.
3. Procurement & Logistics Parameters
- Minimum Order Quantity (MOQ): 5 wafers (Evaluation) / 25 wafers (Production)
- Standard Packaging: Individual wafer carriers / 25-wafer cassettes under cleanroom conditions
- Typical Lead Time: 3–5 weeks production allocation
- Delivery Incoterms (2020): DDP European Semiconductor Fab
- Hazardous Materials Status: Non-hazardous crystalline substrate
Quality Assurance & Assays: Inspection certificates (e.g. EN 10204 3.1) and accredited independent assayer reports (e.g. SGS / Alfred H Knight) are provided per contract specification and agreed order terms. EU REACH and statutory documentation are aligned during quotation.