TECHNICAL SPECIFICATION · IGN-B10
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Technical Data & Commercial Terms
Category: Pillar B: Digital Foundation Materials · Commercial Status: Allocation / Inquiry-Only
1. Physical & Chemical Specification
| Property | Technical Specification / Nominal Parameter |
|---|---|
| Growth Method | Float Zone (FZ) monocrystalline silicon |
| Diameter | 100 mm / 150 mm / 200 mm |
| Bulk Resistivity | > 1,000 to > 10,000 Ω·cm (Ultra-high resistivity) |
| Minority Carrier Lifetime | ≥ 1000 µs (High recombination lifetime) |
| Interstitial Oxygen (Oi) | < 1.0 x 10¹⁶ atoms/cm³ (Extremely low oxygen) |
| Application | High-voltage power devices (IGBTs, Thyristors), RF silicon, detectors |
2. Customs & Standards Compliance
- EU Tariff (TARIC / HS Code):
3818 00 10 (Silicon Wafers, Doped/Polished) - Standards & Test Methods: SEMI Standards, ASTM F84
- Quality Certificates: Carrier lifetime map, four-point probe resistivity profile, EN 10204 3.1
- ℹ️ Customs classification, origin information and applicable documentation are confirmed for the specified product and transaction. Available inspection and compliance documents are listed in the quotation. Any applicable CBAM obligations depend on the product classification and import arrangement.
3. Procurement & Logistics Parameters
- Minimum Order Quantity (MOQ): 25 wafers
- Standard Packaging: Cleanroom cassette in vacuum sealed foil
- Typical Lead Time: 3–4 weeks batch allocation
- Delivery Incoterms (2020): DDP European customer fab
- Hazardous Materials Status: Non-hazardous solid semiconductor
Quality Assurance & Assays: Inspection certificates (e.g. EN 10204 3.1) and accredited independent assayer reports (e.g. SGS / Alfred H Knight) are provided per contract specification and agreed order terms. EU REACH and statutory documentation are aligned during quotation.